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Magazine Name : Ieee Transactions On Electron Devices

Year : 2003 Volume number : 50 Issue: 07

Reduced Trapping Effects And Improved Electrical Performance In Buried-Gate 4h-Sic Mesfets (Article)
Subject: Surface Effects , Current Instability
Author: C I Thomas      G Koley     
page:      1569 - 1574
Effect Of Inhomogeneous Line Broadening On Gain And Differential Gain Quantum Dot Lasers (Article)
Subject: Size Fluctuation , Gain
Author: Omar Qasaimeh     
page:      1575 - 1581
Effect Of Process Variations And Ambient Temperature On Electron Mobility At The Sio2/4h-Sic Interface (Article)
Subject: Mosfet , Mobility , Silicon Carbide
Author: Gilyong Chung      C Feldman      James A Cooper     
page:      1582 - 1588
Power Gain Singularities In Transferred-Substrate Inalas-Ingaas-Hbts (Article)
Subject: Inp , Ingaas
Author: Mark J W Rodwell      Miguel Urteaga     
page:      1589 - 1598
0.2-Um Gate-Length Ingap-Ingaas Dcfets For C-Band Mmic Amplifier Applications (Article)
Subject: Mmic Amplifiers , T-Gates
Author: Hsien-Chin Chiu      Shih-Cheng Yang      Yi-Jen Chan     
page:      1599 - 1603
Ballistic Transport In High Electron Mobility Transistors (Article)
Subject: Mobility , Ballistic Transport
Author: Jing Wang      Mark Lundstrom     
page:      1604 - 1609
A Quantum Dot Image Processor (Article)
Subject: Parallel Processing , Nanowire
Author: Sina Balkir      Sandipan Pramanik     
page:      1610 - 1616
Analysis Of Tungsten And Titanium Migration During Esd Contact Burnout (Article)
Subject: Titanium , Tungsten
Author: Andrew J Walker      Kim Yen Le      James Shearer     
page:      1617 - 1622
Programmable Single-Electron Transistor Logic For Future Low-Power Intelligent Lsi Proposal And Room-Temperature Operation (Article)
Subject: Memories , Coulomb Blockade
Author: Ken Uchida      Junji Koga      Akira Toriumi     
page:      1623 - 1630
A Physical Short-Channel Threshold Voltage Model For Undoped Symmetric Double-Gate Mosfets (Article)
Subject: Mosfet , Threshold Voltage
Author: Qiang Chen      Evans M Harrell      James D Meindl     
page:      1631 - 1637
Numerical Analysis Of Alpha-Particle-Induced Soft Errors In Floating Channel Type Surrounding Gate Transistor (Fc-Sgt) Dram Cell (Article)
Subject: Dram , Soft Error
Author: Fumiyoshi Matsuoka      Fujio Masuoka     
page:      1638 - 1644
Fabrication Of Horizontal Current Bipolar Transistor (Hcbt) (Article)
Subject: Bipolar Transistors , Cvd
Author: Tomislav Suligoj      Kang L Wang      Marko Koricic     
page:      1645 - 1651
Modeling Alpha-Particle-Induced Accelerated Soft Error Rate In Semiconductor Memory (Article)
Subject: Capping Layer , Alpha Particale Incident Angle
Author: Do Woo Kim      Myeong Kook Gong      Deuk Sung Choi     
page:      1652 - 1657
Electrical Characterization And Process Control Of Cost-Effective High-K Aluminum Oxide Gate Dielectrics Prepared By Anodization Followed By Furnace Annealing (Article)
Subject: Mos Capacitor , Al2o3
Author: Szu-Wei Huang      Jenn-Gwo Hwu     
page:      1658 - 1664
Modeling Of Electron Mobility Degradation By Remote Coulomb Scattering In Ultrathin Oxide Mosfets (Article)
Subject: Mobility Degradation , Mobility Modeling
Author: David Esseni      Antonio Abramo     
page:      1665 - 1674
Linear Kink Effect Induced By Electron Valence Band Tunneling In Ultrathin Gate Oxide Bulk And Soi Mosfets (Article)
Subject: Noise Overshoot , Floating Body Effects
Author: J M Rafi      E Simoen      C Claeys     
page:      1675 - 1682
Characteristics Of Low-Leakage Deep-Trench Diode For Esd Protection Design In 0.18-Um Sige Bicmos Process (Article)
Subject: Sige , Hbt , Bicmos
Author: Jen-Kon Chen      Shiao-Shien. Chen      Jin-Lian Su     
page:      1683 - 1689
A New, High-Voltage 4h-Sic Lateral Dual Sidewall Schottky (Ldss) Rectifier Theoretical Investigation And Analysis (Article)
Subject: Sic , Lateral Device
Author: M Jagadesh Kumar      C Linga Reddy     
page:      1690 - 1693
Study On A Lateral-Electrical-Field Pixel Architecture For Flc Spatial Light Modulator With Continuously Tunable Grayscales (Article)
Subject: Ferroelectrics , Grayscale
Author: Min Jiang      Bing Yang      Yangyuan Wang     
page:      1694 - 1696
Design And Optimization Of Double-Resurf High-Voltage Lateral Devices For A Manufacturable Process (Article)
Subject: Ldmos , High Voltage
Author: Mohamed Imam      Zia Hossain      Jim Adams     
page:      1697 - 1701
Multiple Ion Implantation Profile Using Differential Channel Dose (Article)
Subject: Multiple , Ion Implantation
Author: Hiroko Tashiro      Kunihiro Suzuki     
page:      1701 - 1705
New Reset Waveform For The Contrast Ratio Improvement Of Ac-Pdp (Article)
Subject: Plasma , Reset , Ramp
Author: Gun-Su Kim      Jun-Hyoung Kim      Seok-Hyun Lee     
page:      1705 - 1708
A Noval Cmos-Compatible Top-Floating-Gate Eeprom Cell For Embedded Applications (Article)
Subject: Embedded , Cmos-Compatible
Author: Ray Duffy      Russell Duane      Alan Mathewson     
page:      1708 - 1711
Measurements Of Ingap Electron Ionization Coefficient Using Ingap-Gaas-Ingap Double Hbts (Article)
Subject: Hbts , Ingap
Author: Wah-Peng Neo      K Radhakrishnan     
page:      1711 - 1714